| 摘要 |
PURPOSE:To enable the high integration and high performance of an LSI by accumulating a film having an oxidation speed faster than a semiconductor substrate on the groove formed on the substrate, oxidizing it, burying the groove with oxidized film to form an insulating region. CONSTITUTION:A groove 13 is formed by etching on a silicon substrate 11 with a resist pattern 12 as a mask, boron B is injected in the slot 13, and a field inversion preventive region 14 is formed. A film 15 is formed with aluminum or the like having faster oxidation speed than the substrate 11, the film 15 remains by etching in the groove 13, the other is removed together with the resist 12, and when the surface of the substrate 11 is oxidized by anodic oxidation, the film 15 becomes an oxide film 16 in the groove 13, and a thin oxidized film 17 is formed on the surface of the substrate 11. The film 17 is removed to expose the surface of the substrate, and a gate insulating film 18, a gate electrode 19 and diffused regions 20 such as for source and drain are formed. |
