发明名称 LIQUID PHASE EPITAXIALLY GROWING METHOD
摘要 PURPOSE:To produce a liquid phase epitaxially grown film only on one surface of a substrate by growing a liquid phase epitaxially grown film by holding a substrate to be treated by a holder formed of a hollow member and a holding member. CONSTITUTION:A holder 2 is formed of a hollow member 3 and a holding member 4 airtightly welded to the end of the member 3. The holder 2 is connected to a vacuum pump 6 via a pipe 5. In the holder 2 is held in vacuum by the operation of the pump 6, thereby holding a gadolinium garnet substrate 1. The holder 2 is dipped in a solution 8 contained in a liquid tank 7, thereby producing a liquid phase epitaxially grown film on the surface of the substrate 1.
申请公布号 JPS5791510(A) 申请公布日期 1982.06.07
申请号 JP19800167521 申请日期 1980.11.28
申请人 FUJITSU KK 发明人 SUZUKI TOSHIHIRO
分类号 C30B19/06;H01F41/28;H01L21/208 主分类号 C30B19/06
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