HALBLEITERLASER-VORRICHTUNG.

摘要

A semiconductor laser device having a first photodetector constructed on one major surface of a semiconductor substrate, a semiconductor laser chip mounted on the major surface adjacent to the first photodetector, and a second photodetector constructed on the major surface adjacent to the first photodetector at the side thereof opposite to the semiconductor laser chip, said second photodetector being positioned during manufacture to detect emissions from the laser chip of an adjacent fixedly positioned laser device.