| 摘要 |
<p>PURPOSE:To enable an image sensor to be improved in operating speed and reduced in cost by a method wherein a switch section is formed on a polycrystalline silicon substrate through the intermediary of an electric insulating layer, and the channel of a transistor in a scanning circuit section is formed on a part of the polycrystalline silicon substrate. CONSTITUTION:A switch section Si is formed on a polycrystalline silicon substrate 1 through an electrical insulating layer 4, and a channel 29 of a transistor in a scanning circuit section 3 is formed on a part of the polycrystalline silicon substrate 1. As mentioned above, a polycrystalline silicon substrate can be used as a substrate of an image sensor, so that an image sensor comparatively large in area can be easily formed and reduced in cost. Moreover, the channel of a transistor is formed on a part of a polycrystalline silicon substrate, whereby an image sensor of this design can be sharply improved in operating speed as compared with one which employs an amorphous silicon substrate. A switch section is formed on a polycrystalline silicon substrate through the intermediary of an electric insulating film, whereby an image sensor can be lessened in stray capacitance and improved in operating speed.</p> |
