发明名称 |
Compound semiconductor substrate and method of manufacturing the same. |
摘要 |
<p>According to this invention, there is provided a compound semiconductor substrate (16) including, on a compound semiconductor base (12) containing a high-concentration impurity, a high-resistance single-crystal layer (14) consisting of the same compound semiconductor as the compound semiconductor constituting the base. Active elements are formed in the high-resistance single-crystal layer (14). <IMAGE></p> |
申请公布号 |
EP0442414(A2) |
申请公布日期 |
1991.08.21 |
申请号 |
EP19910101865 |
申请日期 |
1991.02.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
IWASAKI, HIROSHI, C/O INTELLECTUAL PROPERTY DIV. |
分类号 |
H01L21/762;H01L21/20;H01L21/203;H01L21/205;H01L27/12;H01L29/10 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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