| 摘要 |
PURPOSE:To enhance an yield in a crystal growth process and to prevent crystallinity from being deteriorated by a method wherein grooves of a desired depth are formed, in a grid shape, on the surface of an Si substrate, a GaAs layer is grown in parts other than the grooves on the substrate, the Si substrate is then polished or etched from the rear side until the substrate becomes a thickness which is smaller than the depth of the grooves and elements are isolated. CONSTITUTION:Grooves 11 are formed, in a grid shape, on the surface of an Si substrate 1; a chemical treatment is executed. A GaAs buffer layer 2 and a GaAs active layer 3 are epitaxially grown selectively and sequentially on parts where the grooves 11 have not been formed on the substrate which has been formed in this manner. A surface electrode 4 is formed on the GaAs active layer. The Si substrate 1 is polished or etched from the rear side until it becomes a thickness which is smaller than the depth of the grooves 11. Thereby, the GaAs buffer layer 2 and the GaAs active layer 3 can be epitaxially grown continuously on the substrate 1, an yield is enhanced in a crystal growth process and it is possible to prevent crystallinity from being deteriorated. |
