| 摘要 |
PURPOSE:To enable the facilitation of an annealing of a wafer by laser annealing the wafer before treating the wafer, thereby eliminating the defect in the existing treated part and the decrease in the characteristics of the wafer. CONSTITUTION:To form a mirror-polished wafer before its treatment or a buried diffused layer, a wafer having a region diffused partly with an impurity in a main surface of the wafer is annealed. After the wafer is laser annealed, it is epitaxially treated. In this manner, the wafer can be readily annealed without decrease in the characteristics of the wafer. |
