Method of manufacturing semiconductor device.

摘要

A method of manufacturing a semiconductor device includes the steps of forming a first insulating layer (11) having a hole on a substrate (10), selectively forming a conductive layer (13) in the hole, selectively forming a second insulating layer (14) on the first insulating layer (11), patterning the second insulating layer (14), and forming an interconnection layer (15) in an opening portion of the second insulating layer (14) formed by patterning so as to be electrically connected to the conductive layer (13).