| 摘要 |
PURPOSE:To make possible an election conduction in one-dimensional manner even in the operation of the title transistor under a high electric field by a method wherein pseudo-one-dimensional electron gas generated in an interface at a striped selectively doped heterojunction is controlled by a gate electrode directing in the transverse direction from both side surfaces of stripe structures. CONSTITUTION:A first AlGaAs electron feeding layer 9 which is an n-type first semiconductor layer, a GaAs channel layer 6 which is a second semiconductor layer having a forbidden band width narrower than that of an impurity non-doped first semiconductor layer, a second AlGaAs layer 10 which is the n-type first semiconductor layer, and an AlGaAs insulating layer 11, which is the impurity non-doped first semiconductor layer, are formed in order on a semi-iusulative substrate 8. A laminated structure consisting of the layers 9, 6, 10 and 11 is selectively etched into a plurality of pieces of stripe structures and a gate electrode 3 is formed in contact to the exposed surface of the substrate 8 and the upper surfaces and side surfaces of the stripe structures. In this case, pseudo-first-dimensional electron gas generated in an interface in a striped selectively doped heterojunction can effectively be controlled by the electrode 3. Thereby, an electron conduction of a first-dimensional manner can be maintained under a high electric field. |
