| 摘要 |
PURPOSE:To enable a storage electrode contact window to be stably and easily formed by a method wherein a first conductive film is etched to form a line-like groove, a protective film provided with an opening in a direction vertical to the groove concerned is formed, a storage electrode contact window, in which its two opposed sides are specified by edges and its rest two sides are also specified, is provided, and a second conductive film and the first conductive film are patterned to form a storage electrode. CONSTITUTION:A bit line BL1 and others are formed on a P-type silicon semiconductor substrate 1, and an insulating film 7, a spacer film 8, and a polycrystalline silicon film 9' are made to grow. A belt-shaped groove 9A is formed extending in a Y direction of the silicon film 9' through a reactive ion etching method. Through a resist process, a photoresist film 12 provided with an opening extending in a direction vertical to the groove 9A. The spacer film 8, the insulating film 7, the insulating film 6, and a gate insulating film 3 are selectively etched through an RIE method, a storage electrode contact film 9B is formed, and a part of an N<+>-type drain region 5 is exposed inside the contact film 9B. A polycrystalline silicon film 9'' is formed, and the polycrystalline silicon films 9' and 9'' are patterned into a storage electrode 9. |
