发明名称 |
Nonvolatile semiconductor memory device and manufacturing method thereof |
摘要 |
A nonvolatile semiconductor memory device is provided including a doped semiconductor substrate and three gate conductor layers electrically insulated from each other in the cell area on the substrate. A first floating gate conductor layer is formed on the substrate and covered by a second control gate conductor layer, forming a twofold polycrystalline silicon structure. A third select gate conductor layer is formed along one side wall of the twofold structure of the floating gate and control gate conductor layers, having a side wall spacer structure. The first conductor layer serves as a floating gate; the second conductor layer serves as a control gate; and the third conductor layer serves as a select gate. A field oxide layer is provided to separate cells from each other. The control and the select gates are connected in a region between cells through the field oxide layer. By providing the third conductor in the form of a side wall spacer, the cell area can be greatly reduced.
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申请公布号 |
US5041886(A) |
申请公布日期 |
1991.08.20 |
申请号 |
US19890412305 |
申请日期 |
1989.09.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, SOO-CHEOL |
分类号 |
G11C16/04;H01L21/28;H01L21/768;H01L21/8247;H01L27/115;H01L29/423;H01L29/788 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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