| 摘要 |
PURPOSE:To obtain a high-quality and sufficient detection efficiency by forming a semiconductor layer consisting of a deposited film which is sensitive to radiation on the surface of a substrate with conductivity, forming an electrode on the surface of the semiconductor layer, and then placing the surface of the semiconductor layer in approximately parallel to the incidence direction of radiation. CONSTITUTION:A CdTe layer 2 is deposited on the surface of a conductive glass substrate 3 by the sputter method and then a Pt thin film is vacuum- deposited onto the surface of the CdTe layer 1 for forming an electrode 2. This detector is placed so that the substrate surface is in parallel to the incidence direction of radiation 7 and the edge surface of the CdTe layer 1 becomes the incidence surface of the radiation. When a high electric field is applied between the conductive glass substrate 3 and the electrode 2, charge which is generated due to mutual operation between the radiation and the CdTe layer 1 is moved by this electric field and is collected by the electrode to turn into signal so that this signal is amplified by an amplifier for enabling the radiation to be detected. Thus, even if a high-energy radiation enter, it can fully be absorbed, thus obtaining a high-quality and sufficient detection effect.
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