| 摘要 |
PURPOSE:To obtain a GaAs Schottky barrier diode (GaAs SBD) with improved inverse withstand voltage characteristic by enhancing a field plate. CONSTITUTION:An n-type GaAs layer 2 is laminated on one main surface of an n<+> type GaAs substrate 1, a field plate 3 is an insulation layer consisting of a fluoride, it is selectively laminated onto the n-type GaAs layer 2, and a window for Schottky electrode 4 is provided. The Schottky electrode 4 is provided at a window of the field plate 3 and is connected to the n-type GaAs layer 2 and then an ohmic electrode 5 is formed on other main surface on the n<+> type GaAs substrate 1. There are only a small number of end-connecting branches at the interface between GaAs and the fluoride and the interface level density is low so that a depletion layer 6 when a specified bias is applied to SBD expands well along the field plate 3 of the fluoride, thus reducing breakdown due to the interface between GaAs and the fluoride. Therefore, it is possible to obtain an inverse withstand characteristic which is equivalent to the original insulation withstand voltage of the n-type GaAs layer 2 and GaAs SBD with an improved inverse withstand voltage characteristic. |
