| 摘要 |
PURPOSE: To obtain a structure having a high degree of integration by forming the constituent layers of a laminated body, so that the layers can show different selectivity to etching and a vertical layer which pass through part of the layers and forming a plurality of identical structures in the vertical direction. CONSTITUTION: After a plurality of FET devices 12 is formed on a semiconductor substrate 10, a flattened insulating layer 14 is formed on the surface of the substrate 10, including the devices 12. Then highly-doped layers 16 and lightly-doped layers 18 are formed alternately on the flattened surface of the layer 14 and a vertical trench 19 is formed through the multilayered laminated body. After the trench 19 has been formed, a plurality of secondary trenches 20 is formed in the laminated area by etching the layers 18. Then a thin capacitor dielectric layer 22 is formed on the entire exposed surface of the laminated polycrystalline Si body, and boron-doped polycrystalline Si 24 is formed on the entire surface of the exposed Si. Therefore, a semiconductor structure for capacitor, switching device, etc., having extremely high degree of integration useful for the formation of a DRAM cell can be formed. |
