| 摘要 |
<p>PURPOSE:To enable using ultrasonic wave as a control signal by making ultrasonic wave travel in a semiconductor substrate, and controlling electric characteristics of a semiconductor device formed on the same substrate. CONSTITUTION:When a pulse is applied between electrodes (an Al film 9 and a P-type impurity region 7) of a piezoelectric element (b), pulse of ultrasonic wave W is generated and travels in a P-type Si substrate 1. When the wave reaches a PSG film 10 on the rear of the substrate 1, the wave is reflected by the film 10, and travels in the direction shown by the ultrasonic wave travelling direction S. A part of the reflected wave reaches the channel region of an MOS transistor (a). Thereby the threshold voltage of said transistor is changed, so that the value of a drain current changes, and substantially, current control effect similar to the effect obtained by applying a signal bias to a gate electrode 4 can be obtained.</p> |
