发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To promptly activate each internal circuit and to reduce the power consumption by providing an output detecting circuit outputting inactivation signal inactivating each internal circuit when the output from a sensing amplifier is detected. CONSTITUTION:In the case of accepting the change of external input, an address buffer 12 changes an address signal, an ATD generation circuit 13 detects the change of the address signal and generates the ATD signal. Simultaneously, a memory array and a decoder 11 output the data of the changed new address number. A sensing amplifier (amp.) 14 amplifys the outputs data and outputs the data to an output circuit 16 and an output detecting circuit 15. In the case of detecting that the amplified data are outputted from the amp. 14, the circuit 15 generates the APD signal being the inactivation signal. The signal is outputted to the decoder 11 sand the amp. 14, consequently, both circuits are inactivated. In such a manner, based on the output of the amp. 14 the APD signal is generated, so that there is no useless time, the amp. 14 is inactivated in its early stage.
申请公布号 JPH03187094(A) 申请公布日期 1991.08.15
申请号 JP19890327525 申请日期 1989.12.18
申请人 SHARP CORP 发明人 KAWATE MASAHIRO
分类号 G11C11/41;G11C11/407;G11C11/409;H01L27/10 主分类号 G11C11/41
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