| 摘要 |
PURPOSE:To improve the characteristic of a device by a method wherein a substrate is subjected to heating at a predetermined temperature in an extra-high vacuum while the substrate surface is completely exposed. CONSTITUTION:If a substrate is subjected to heating in a high vacuum while the substrate surface 1 is exposed, the migration of atoms in the surface begins at a temperature much lower a melting point. Therefore, the migration of the atoms is especially active at a protruding part and an acute-angle or right-angle part and the substrate surface having rounded corner parts is obtained. Therefore, not only an electric field concentration at the corner part is eliminated but also defects created by surface unevenness and etching is eliminated. Although a new crystal surface is created by the migration, in this case, the new surface is composed of a stable crystal surface having a small surface energy by an action which minimizes a system energy. With this constitution, a leakage, an electric field concentration and a step cut of an insulating film, etc., arising when the device is formed can be prevented, so that the device characteristics can be improved.
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