发明名称 |
SILICON NITRIDE VACUUM FURNACE PROCESS |
摘要 |
An improved process of preparing silicon nitride by the direct nitridation of silicon metal is disclosed. The process is a multi-step one which is substantially more efficient than prior processes and produces a silicon nitride having an oxygen content of less than 1%, a silicon metal content of less than 0.5%, and an alpha phase content of at least 85%, preferably at least 90%. The silicon nitride may be converted to a powder.
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申请公布号 |
CA2024139(A1) |
申请公布日期 |
1991.08.15 |
申请号 |
CA19902024139 |
申请日期 |
1990.08.28 |
申请人 |
NORTON COMPANY |
发明人 |
WILLKENS, CRAIG A.;HARTLINE, STEPHEN D.;ARSENAULT, NORMAND P. |
分类号 |
C01B21/068;(IPC1-7):C01B21/068 |
主分类号 |
C01B21/068 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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