| 摘要 |
PURPOSE:To form resist patterns in such a manner that the good contact of a conductive film and a substrate can be taken even when the pattern is fine by previously providing the auxiliary patterns of projections different from design patterns near the patterns corresponding to the steps of an underlying film. CONSTITUTION:The projecting patterns different from the design patterns are provided near the contact hole patterns of a previous stage. The steps are formed if the resist patterns 3 are formed by using such photomask. If the resist exists on the conductive film 4, the transferred resist patterns 3 have no constrictions (thinning) and the resist patterns 3 approximate to the design patterns are obtd. The resist patterns 3 approximate to the design patterns are obtd. even when the degree of margin of lithography is low. The device which is free from junction leak, etc., is thus obtd. |
