Semiconductive arrangement having dissimilar, laterally spaced layer structures, and process for fabricating the same.

摘要

A depression (10b) is formed by mesa etching or the like in the surface of an insulative substrate (10). A first semiconductive layer structure such as a PNP layer structure (14b) is formed on the substrate (10). An electrically insulative isolation layer (16') is formed on layer (14a), and then a second layer structure such as an NPN layer structure (24) is formed on the isolation layer (16'). Where the thicknesses of the first and second layer structures (14b, 24) are equal, and the depth of the depression (10b) is equal to the combined thicknesses of the first layer structure (14b) and the isolation layer (16'), the second layer structure (24) will be coplanar with the first layer structure (14b). Dissimilar microelectronic devices such as complementary heterojunction bipolar transistors may be formed in the exposed surfaces of the first and second layer structures (14b, 24) by common and simultaneous processing.