SIGNAL OUTPUT CIRCUIT HAVING BIPOLAR TRANSISTORS AT OUTPUT, FOR USE IN A MOS SEMICONDUCTOR INTEGRATED CIRCUIT,申请号EP19900119103-传众专利搜索

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发明名称	SIGNAL OUTPUT CIRCUIT HAVING BIPOLAR TRANSISTORS AT OUTPUT, FOR USE IN A MOS SEMICONDUCTOR INTEGRATED CIRCUIT
摘要
申请公布号	EP0421448(A3)	申请公布日期	1991.08.14
申请号	EP19900119103	申请日期	1990.10.05
申请人	KABUSHIKI KAISHA TOSHIBA;TOSHIBA MICRO-ELECTRONICS CORPORATION	发明人	UENO, MASAJI, C/O INTELLECTUAL PROPERTY DIVISION;OFUSA, KUMI, C/O INTELLECTUAL PROPERTY DIVISION
分类号	H01L27/06;H01L21/8249;H01L27/00;H03K17/567;H03K19/00;H03K19/003;H03K19/017;H03K19/08;H03K19/0944;(IPC1-7):H03K19/094	主分类号	H01L27/06
代理机构		代理人
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