| 摘要 |
<p>To avoid problems associated with destructive readout, non-destructive readout is provided by measuring current through the ferroelectric memory element (F2) as a measure of its resistance. Information is stored in the ferroelectric memory element (F2) by altering its resistance through polarizing voltages. The half select phenomenon is avoided by using isolation zener diodes (Z1 Z2) or bipolar junction transistors (Q2, Q3). The polarizing voltages are applied between a row line (X1) and a column line (Y1) through the two isolation elements (Z1, Z2), which, if zener diodes, are respectively forward biased and reverse biased to break down. During a read operation, one zener diode (Z1) is reverse biased to break down, and the other (Z2) is reverse biased to non-conduction. The small read current is preamplified (Q1) at the memory cell (1,1). <IMAGE></p> |
