| 摘要 |
<p>PURPOSE:To prevent the deterioration in characteristics by the misregistration of a gap by forming the gap, which is patterned in a self-matching manner to the shape of a gate electrode by adjusting the exposure amt. from the rear surface side of a substrate, on the thin film above the gate electrode. CONSTITUTION:After the thin film 30 is formed above the gate electrode 3, a negative type resist 26 is formed on the thin film 30. The negative type resist 26 is irradiated with light from the rear surface side of the substrate 1 with the gate electrode 3 as a light shielding mask to excessively expose the negative type resist 26, by which the regist mask 26a of the pattern shifted from the edge of the gate electrode 3 to the inner side is formed on the thin film 30; thereafter, the thin film 30 is etched by using this regist mask 26a to form the gap. The gap controlled in the width and position with high accuracy in the transverse direction of the gate electrode is formed in the self-matching manner on the thin film 30 formed on the gate electrode 3 in this way.</p> |
