| 摘要 |
PURPOSE: To obtain a self-aligned T-gate high electron mobility transistor(HEMT), having a low parasitic resistance without performing high temperature processings by forming a mask layer having an opening aligned with a gate, so as to cover the surface of the gate and its surrounding area so that the opening can regulate first and second lateral intervals between both ends of the top section of the gate and edge sections of the opening. CONSTITUTION: The width of a mask 42 is decided, so that a first lateral interval 52 can be formed between the upper left end of the cross section of a T-shaped gate 34 and the edge section of an opening 44 adjacent to the upper left end, and a second lateral interval 54 can be formed between the upper right end of the cross section of the gate 34 and the part of the opening 44 adjacent to the upper right end. Metallic electrodes 48 and 50 are respectively stuck to a surface 14a in areas below the internals 52 and 54. The upper section 34b of the gate 34 functions as a mask in a dielectric side wall forming process and inhibits the adhesion of a metal to the surface 14a in an area vertically below the upper section 34b. Since the width of the gate 34 decides the channel width of a HEMT, etc., the channel width can be made narrower. Therefore, a passivated T-gate HEMT, having a reduced gate resistance, can be obtained.
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