| 摘要 |
PURPOSE:To assure the widening of a substrate effective space by miniaturizing a guard ring part as well as the simplification of the guard ring formation process by a method wherein the second conductivity type pattern is brought into Schottky contact with one main substrate of a semiconductor substrate while the first and second conductivity type patterns are isolated from each other through the intermediary of respective insulator or resisting material. CONSTITUTION:The first conductivity type pattern 22 is formed on one main surface of an N type semiconductor substrate 21 comprising an N<+> type substrate 21a and an N<-> type epitaxial layer 21b laminated on the substrate 21a so that said pattern 22 may be brought into Schottky contact with said one main surface while the second one ring shape conductivity type pattern 23 is formed as if encircling the first conductivity type pattern 22 so that said pattern 23 may be brought into Schottky contact with said layer 21b. The first and second conductivity type patterns 22, 23 are isolated from each other through the intermediary of insulating films 24, 25. On the other hand, the third conductivity type pattern 29 is formed on the other main surface of the substrate 21. |
