MEMBER FOR TREATING SEMICONDUCTOR,申请号JP19890323861-传众专利搜索

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发明名称	MEMBER FOR TREATING SEMICONDUCTOR
摘要
申请公布号	JPH03185820(A)	申请公布日期	1991.08.13
申请号	JP19890323861	申请日期	1989.12.15
申请人	TOSHIBA CERAMICS CO LTD	发明人	KATO SHIGEO;TAZOE HARUO;TAN NOBUYUKI;ICHIKAWA HIROYUKI;MATSUDA SHOJI
分类号	H01L21/22;H01L21/205	主分类号	H01L21/22
代理机构		代理人
主权项
地址

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