| 摘要 |
PURPOSE:To detect offset values with high speed and high precision, by connecting and controlling, on line, a wafer conveying means and each equipment, printing and developing, on a wafer, a deviation measuring mark on a reticle and a calibration mark simultaneously, together with a pattern on the reticle at the time of exposure, and calculating alignment precision and offset amount by measuring both of the marks. CONSTITUTION:Inspection is automatically performed while a wafer WF to be inspected is moved by the command of a control equipment, and each equipment and a stepper control equipment CD are connected by using a communication cable. Alignment is performed by using a set mark formed on the upper surface of a reticle RT lens LN disposed above a demagnification projection lens LN and an alignment mark of the reticle. By opening a shutter SHT for exposure, resist of the wafer WF is overlapped on a reticle side deviation amount measuring mark and a wafer side mark, and exposure is performed. After stage movement, alignment, and exposure are repeated and finished, development is performed by using developing equipment DE. Measurement of the deviation amount measuring mark is performed in the inspection process, measured values are stored in the controle equipment CD, and autoalignment precision and offset are calculated and output. |
