| 摘要 |
A thin film magnetic array memory affords relatively high packing densities while avoiding the problem of magnetic domain creep through the use of thin films of superconducting material disposed on the work lines of the memory. The superconducting films shunt magnetic fields generated by currents carried within the word lines and prevent these fields from adversely affecting adjacent memory cells in the array. By constraining the magnetic fields with the use of the superconducting films, the word lines can be packed close to one another in the array structure, thereby increasing the amount of information that can be stored in a unit area of the array.
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