Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby

摘要

A process for forming silicon dioxide, SiO2, or silicon nitride, Si3N4, layers on selected substrates which includes reacting diethylsilane, C4H12Si, with a selected oxygen-containing compound or nitrogen-containing compound in a plasma enhanced chemical vapor deposition (PECVD) chamber. The conformality of the coatings thus formed is in the range of 85% to 98%. The diethylsilane liquid source for the associated gas flow processing system may be maintained and operated at a source temperature as low as room temperature.