| 摘要 |
PURPOSE:To suppress an influence by a working residue as far as possible and to enhance the characteristic and the yield of a device by a method wherein the area on the surface is made larger than the area of the rear surface of a pedestal and the cross-sectional shape as viewed from at least one direction of the protruding pedestal is formed to be an inverse trapezoid shape. CONSTITUTION:The cross-sectional shape of a protruding pedestal 106 on which a microwave semiconductor element 101 is mounted is formed to be an inverse trapezoid shape. As a result, ends of matching circuits 102 can be situated so as to be close to ends of the microwave semiconductor element 101 which has been mounted on the surface of the protruding pedestal 106. Consequently, the length of bonding wires 105 can be shortened irrespective of the working residue of a carrier plate 103, and the limitation of designing the matching circuits 102 can sharply be relaxed. The size in the lengthwise direction on the surface of the protruding pedestal 106 at the carrier plate 103 can be made to coincide with the size in the lengthwise direction of the microwave semiconductor element 101, and it is possible to prevent the displacement of a mounting position and the nonuniformity of the length of the bonding wires 105. Thereby, the characteristic and the yield of a microwave semiconductor device can be enhanced. |
