发明名称 SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To omit a process in which the surface of a rear electrode is scrubbed and alloyed on a previously melted solder by a method wherein the surface of the rear electrode is formed of an alloy film whose element is the same as that of a solder for mounting use. CONSTITUTION:The rear-electrode surface 23 of a semiconductor element provided with a rear electrode which is brazed inside an enclosure or on a circuit board by using a low-melting alloy is formed of an alloy film whose element is the same as that for this solder. In this case, the solder can be spread evenly on the rear without scrubbing the alloy film on a previously melted solder at a mounting operation; it is possible to reduce a defect that an excess solder is deposited on the surface of the semiconductor element during this scrubbing process and that the surface is contaminated. Thereby, it is possible to omit a process in which the rear-electrode surface is scrubbed on the previously melted solder at the mounting operation.
申请公布号 JPH03185740(A) 申请公布日期 1991.08.13
申请号 JP19890324485 申请日期 1989.12.14
申请人 TOSHIBA CORP 发明人 KURITA NORIAKI
分类号 H01L21/52 主分类号 H01L21/52
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