发明名称 |
InP-based quantum-well laser |
摘要 |
Disclosed is a graded index separate confinement heterostructure quantum well (GRIN-SCH QW) laser with continuously graded, substantially index matched InGaAsP confinement layer. The inventive device is well adapted for high power output in the wavelength region 1.2-1.68 mu m. In particular, it can readily be designed to have an output wavelength that makes it suitable as pump source for Er-doped optical fiber amplifiers. A method of manufacturing a laser according to the invention is also disclosed.
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申请公布号 |
US5040186(A) |
申请公布日期 |
1991.08.13 |
申请号 |
US19900564679 |
申请日期 |
1990.08.07 |
申请人 |
AT&T BELL LABORATORIES |
发明人 |
LOGAN, RALPH A.;TANBUN-EK, TAWEE;TEMKIN, HENRYK |
分类号 |
H01L33/00;H01L33/06;H01S5/20;H01S5/34;H01S5/343 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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