发明名称 InP-based quantum-well laser
摘要 Disclosed is a graded index separate confinement heterostructure quantum well (GRIN-SCH QW) laser with continuously graded, substantially index matched InGaAsP confinement layer. The inventive device is well adapted for high power output in the wavelength region 1.2-1.68 mu m. In particular, it can readily be designed to have an output wavelength that makes it suitable as pump source for Er-doped optical fiber amplifiers. A method of manufacturing a laser according to the invention is also disclosed.
申请公布号 US5040186(A) 申请公布日期 1991.08.13
申请号 US19900564679 申请日期 1990.08.07
申请人 AT&T BELL LABORATORIES 发明人 LOGAN, RALPH A.;TANBUN-EK, TAWEE;TEMKIN, HENRYK
分类号 H01L33/00;H01L33/06;H01S5/20;H01S5/34;H01S5/343 主分类号 H01L33/00
代理机构 代理人
主权项
地址