| 摘要 |
PCT No. PCT/EP88/00188 Sec. 371 Date Jan. 5, 1989 Sec. 102(e) Date Jan. 5, 1989 PCT Filed Mar. 10, 1988 PCT Pub. No. WO88/07096 PCT Pub. Date Sep. 22, 1988.An epitaxial facility with at least one reaction chamber made of dielectric material, comprising a gas inlet in the ceiling area and a gas outlet in the floor area, a gas mixer connected to the gas inlet of the reaction chamber for the infeed of reaction and scavenging gases, a polyhedral support made of graphite, which is mounted so as to be able to rotate in the reaction chamber between the gas inlet and the gas outlet and tapers toward the gas inlet, for accommodating a number of wafers, and induction heating system essentially surrounding the reaction chamber for indirect heating of the wafer support. The epitaxial facility further comprises a device for transferring the wafer support from a charging zone outside of the reaction chamber to a working position inside the reaction chamber, a device for charging the wafer support with wafers in the charging zone, and a clean-air space accommodating the facility components. With the use of scavenging and reaction gases from the gas mixer through the reaction chamber when the wafer support is in the working position, and of pure air and protective gases in the clean-air space when the wafer support is in the charging zone, and between the charging zone and the working position within the reaction chamber, particles entrained by the gases and particles arising in the epitaxial process are kept away from the surface of the wafer support.
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