| 摘要 |
PURPOSE:To obtain an ohmic electrode with low contact resistance without producing any release of a metal layer at an electrode forming process by using a high melting-point metal which is superb in adhesion property as a first-layer metal and a metal which helps to promote outward diffusion of an atom constituting a ground semiconductor as a second-layer metal. CONSTITUTION:In an ohmic electrode for a III-IV chemical compound semiconductor, a high melting-point metal which is superb in adhesion property is used as a first-layer metal, a metal which helps to promote outward diffusion of an atom constituting a ground semiconductor is used as a second-layer metal, and a dopant metal which enables a conductivity type of the same conductive type as the ground semiconductor to be formed is included within either metal layer on a third layer or higher. For example, an Ti layer 3 is clad onto a p-GaAs layer 2 which is subjected to epitaxial growth onto an n-GaAs substrate 1 and then an Au layer 4. an AuZn layer 5, and an Au layer 6 are subjected to vacuum continuous deposition. Then. a Ti layer 7, an Au layer 8, an AuGe layer 9, and an Au layer 10 are subjected to vacuum continuous deposition onto the n-GaAs substrate 1. Then, heat treatment is performed at 400 deg.C within hydrogen gas environment, thus forming ohmic electrode at the P and n sides. |
