Verfahren zum elektrolytischen Ätzen eines einkristallinen Halbleiterkörpers mit p-n-Übergang,申请号ATD199702-传众专利搜索

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发明名称	Verfahren zum elektrolytischen Ätzen eines einkristallinen Halbleiterkörpers mit p-n-Übergang
摘要
申请公布号	AT199702(B)	申请公布日期	1958.09.25
申请号	ATD199702	申请日期	1957.03.26
申请人	SIEMENS-SCHUCKERTWERKE AKTIENGESELLSCHAFT	发明人	DR. NORBERT SCHINK
分类号		主分类号
代理机构		代理人
主权项
地址

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