METALIC MULTI-LAYER WIREING METHOD

摘要

The interconnection line of thin metal film for preventing the hillock or electromigration is formed by annealing a titanium metal film (3) deposited an Si- implanted Al-1% Si film (2) formed on Si- wafer (4). The aluminium metal film containing 2% silicon can be used to omit the ion implantation process. The 1%- silicon in aluminium film, though the compound of Al5Ti3Si12 is formed, is maintained by controlling the dose of silicon implanted at 50 Kev.