| 摘要 |
PURPOSE: To provide a semiconductor laser having a wider continuous tuning wavelength range and a high optical output by making the energy of photons injected into a laser activation region from a photon emission region lager than the sum of the chemical potential of electron-hole pairs and the energy of vertical phonons in the laser activation section. CONSTITUTION: When photons are injected into a laser activation region from a photon emission region of a semiconductor laser with energy hνWG, a photon can raise one electron to a conductor band B from the Fermi sea of a valence band A. When an electron generated by the injection of the photon has energy higher than the chemical potential of the electron and hole plasma(EHP) in the laser activation region by at least the magnitude of the lattice energy, the electron scatters one photon of an optical mode with energy hνLO. In order to block this process, the band edge energy EWG=hνWG in a waveguide region must be larger than the energy hνLO of the photon.
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