| 摘要 |
PURPOSE:To form an AuSn eutectic alloy when a junction is formed and form a reliable junction by alternately forming Au layers and Sn layers by evaporation on barrier layers on the principal surface and the rear surface of a sub- mount. CONSTITUTION:Barrier layers 5 composed of uppermost surface Au layers are formed on the principal surface and the rear surface of a sub-mount 4. Au layers 71 (widths: W2) and Sn layers (widths: W1) are alternately formed by evaporation by using a metal mask in a region wherein an LD chip 1 is placed on the barrier layer 5 on principal the surface side. The Au layers 71 (widths: W2) and the Sn layers (widths: W1) are alternately formed by evaporation over the whole region also on the rear side. When the LD chip 1 and a radiation block 6 are pressurized by a given constant load and heated at the same time, the Au layers 71 are diffused into the Sn layers 72 and Au and Sn form an alloy solder. Thus, the joining surfaces of the LD chip 1 and the sub-mount 4 radiation block 6 adhere to each other through an eutectic alloy. |
