发明名称 HIGHLY HEAT-DISSIPATING TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a highly heat-dissipating type semiconductor device provided with a highly heat-dissipating block whose strength is high by a method wherein the surface of a semiconductor chip is faced downward, the chip is bonded to the rear of a die pad, the chip is resin-sealed by using a sealing metal mold which forms a recessed part in a molding resin, and the highly heat-dissipating block provided with a protruding part in a position opposite to the recessed part is mounted. CONSTITUTION:Electrodes of a semiconductor chip 5 which has been fixed and bonded to the rear of a die pad 4 by using a brazing material are bonded to internal leads 7 by using metal thin wires 6. Parts to be bonded to the metal thin wires 6 at the internal leads 7 are plated with silver or the like so as to be connected surely. The surface of the semiconductor chip 5 is faced downward; the chip is bonded to the rear of the die pad 4; after that, the chip is resin-sealed by using a sealing metal mold which forms a recessed part in a molding resin 3. The protruding part on the rear surface of a highly heat- dissipating block 1 is mounted by applying an adhesive 2 to the protruding and recessed fitting part by being fitted to the part.
申请公布号 JPH03183157(A) 申请公布日期 1991.08.09
申请号 JP19890321889 申请日期 1989.12.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 YOSHIDA MINORU
分类号 H01L23/40;(IPC1-7):H01L23/40 主分类号 H01L23/40
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