发明名称 NON-VOLATILIZATION SEMICONDUCTOR MEMORY
摘要 <p>The memory equips the data correction memans which is tested easily. The memory comprises means generating the hamming parity code with the unti of the word or byte corresponding to each address, means storing the parity code corresponding to the input data into the memory cell, means decoding the data and parity bits after reading them, and means separating the memory cell, the error correction circuit, and other circuits each other.</p>
申请公布号 KR910005974(B1) 申请公布日期 1991.08.09
申请号 KR19880008956 申请日期 1988.07.18
申请人 SAM SUNG ELECTRONICS CO.,LTD. 发明人 KIM JIN-KI;DO JAE-YOUNG
分类号 G11C17/00;(IPC1-7):G11C17/00 主分类号 G11C17/00
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