发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To detect the plated thickness inside an opening part by a method wherein a conductive film adjacent to the peripheral edge of the opening part in an insulating film is connected to an anode by a wire and an electric current flowing in the wire is detected. CONSTITUTION:An anode member 11 is connected to a conductive resin film 8 by a wire l3; an ampere meter 13 is installed in the wire l3. When an electrolytic plating operation is executed by using a direct current in which a metal film 3 for electricity application use is used as a cathode and the anode member 11 is used as an anode, a plated film A is grown on the metal film 3 for electricity application use. When the film thickness of the plated film A reaches the film thickness of a resist film 5 and the plated film A comes into contact with a sidewall of an opening part 8a in the conductive resin film 8, an electric current flows in the metal film 3 for electricity application use directly from the anode member 11 via the wire l3, the conductive resin film 8 and the plated film A; the electric current is detected by using the ampere meter 13. At this time, the supply of the electric current from a power supply 12 is stopped and the plating operation is finished. Thereby, the plated film A becomes a protruding electrode 7 of a prescribed film thickness which is nearly equal to the film thickness of the resist film 5.
申请公布号 JPH03183136(A) 申请公布日期 1991.08.09
申请号 JP19890322954 申请日期 1989.12.12
申请人 FUJITSU LTD 发明人 YOSHIMURA TETSUO
分类号 C25D7/12;C25D21/12;H01L21/288;H01L21/3205;H01L21/321;H01L21/60;H01L21/66 主分类号 C25D7/12
代理机构 代理人
主权项
地址