| 摘要 |
<p>PURPOSE:To enhance the breakdown strength of an insulating film and to highly integrate an element by a method wherein a semiconductor wafer is oxidized thermally, a gate oxide film is formed on its surface, a heat treatment is then executed in an atmosphere containing a reducing gas containing hydrogen and a metal contamination in the gate oxide film is removed. CONSTITUTION:A semiconductor wafer is oxidized thermally; a gate oxide film is formed on it; after that, a heat treatment is executed in an atmosphere containing a reducing gas containing hydrogen at 600 to 1350 deg.C for one second to 48hrs. As the atmosphere containing the reducing gas containing hydrogen, 100% H2 gas may be used or H2 gas which has been diluted with an inert gas such as N2 gas, Ar gas or the like or with a mixed gas of them may be used. By means of the heat treatment in the reducing-gas atmosphere containing hydrogen, metal impurities in the oxide film can be removed.</p> |
