| 摘要 |
<p>PURPOSE:To obtain an electrostatic chuck plate whose electrostatic attraction force is large and whose thermal conductivity is high by a method wherein an electrode itself is used as a base material and an electrode face other than a part to which an electric current is applied is covered with a nitride-based ceramic. CONSTITUTION:An electrode 2 itself is used as a base material for an electrostatic chuck plate; a nitride-based ceramic coating film 7 formed by a CVD method is formed on the whole surface other than a part 8 to which an electric current is applied. The electrostatic chuck plate is attached to a support stand 6 equipped with a temperature control mechanism such as a circulation function of cooling water or the like; the temperature of a wafer is controlled. In order to increase a temperature control property and a uniform temperature property of the wafer, it is preferable that an electrostatic attraction force is large, that the thermal conductivity of the electrode and a dielectric layer material is high and that a thickness is thinner.</p> |
