| 摘要 |
<p>The present invention relates to a Bloch-line memory element and a nonvolatile RAM memory using such a Bloch-line memory element. The Bloch-line memory element comprises a planar magnetic memory element (10) having magnetic domains separated by a wall which contains a Bloch-line (12) disposed within the individual memory element (10). Coincident write lines (30, 32) interact with the magnetic element (10) for writing a Bloch-line (12) to a predetermined area within the memory element (10). For sensing the presence or absence of a Bloch-line (12) within the predetermined area, one write conductor (30, 32) and a sense line (14) are used for determining the logic state of the particular memory element (10). A plurality of memory elements (10) are disposed in an address matrix and can be selected for reading from or writing to the particular Bloch-line RAM memory element for determining or writing bits of words.</p> |
