DRAM with impurity region of second conductivity - has insulating layer on first conductivity semiconductor substrate surface

摘要

A semiconductor substrate (1) of a second conductivity has an impurity region of first conductivity on its main surface. On the latter is deposited an insulating layer with an aperture region, reaching up to the impurity region. On the latter and in contact with it is a first electrode layer, extending to the insulating layer surface. The contacting is carried out via a first region (11a) while a second region of the electrode layer extends vertically upwards w.r.t. the substrate main surface and along the first region outer edge. The electrode layer surface is coated by a dielectric layer (12), covered by a second electrode layer (13). ADVANTAGE - Increased capacity of a DRAM capacitor, with reduced insulating region between adjacent capacitors.