Semiconductor memory device.

摘要

In a semiconductor memory device comprising a plurality of groups of memory cell blocks, a plurality of groups of predecoder input signal lines respectively connected to predecoders in the memory cell block groups, and a predecoder input signal generator. The predecoder input signal generator sets the predecoder input signal lines of the selected group to either the high level or the low level in accordance with the external address information. A clamping circuit is provided to clamp substantially half the predecoder input signal lines of the unselected group to the high level, and the remaining half to the low level. Because one half of the predecoder input signal lines of the unselected group is clamped to the high level and the remaining half of the unselected group is clamped to the low level, their line loads serve as decoupling capacitors both at the charging and discharging of the predecoder input signal lines of the selected group, so that the power supply noise is reduced in both occasions. <IMAGE>