Hot electron transistor.

摘要

A semiconductor device or a hot electron transistor being constructed such that an InAs base layer (11) is sandwiched between a GaSb emitter barrier layer (12) and a GaInAsSb-system collector barrier layer (13), which results in preventing hot electrons of unnecessarily high energy from being injected into the collector and an avalanche current from being generated, thereby making it possible to improve the saturation characteristics of the device. <IMAGE>