摘要 |
REVERSIBLE RESISTANT DEVICE A reversible resistant device having the property of being normally non-conductive, but being adapted to being converted to the conductive state. This change in conductive state is achieved by subjecting the device to a high voltage or high electric field. The essence of the device is a normally non-conductive film located between conductive layers, the film being formed by metal oxide coated metal particles embedded in a binder. A conductive film is located intermediate the normally non-conductive film and one of the conductive layers, the conductive film comprising metal particles dispersed within a second binder. When subjected to a high potential, the metal oxide coating looses its dielectric properties and renders the film conductive. |