发明名称 METHOD OF DEPOSITING THIN FILMS CONSISTING MAINLY OF CARBON
摘要 <p>While CVD (chemical vapour deposition) methods and enhanced CVD methods for coating a substrate with a carbon coating have recently been attracting considerable interest, problems have occurred hitherto of separation of the carbon coating from the underlying substrate due to differential thermal expansion or contraction. The present invention discloses a modification of the conventional CVD process for carbon deposition in accordance with which the deposition conditions are changed in order that the hardness of the carbon coating at the interface between the coating and the underlying substrate is lower than that at the external surface of the coating.</p>
申请公布号 KR910005836(B1) 申请公布日期 1991.08.05
申请号 KR19890002243 申请日期 1989.02.25
申请人 SEMICONDUCTOR ENERGY LAB. CO. LTD. 发明人 ITOH KENJI
分类号 C01B31/04;C01B31/06;C23C16/26;C23C16/27;C23C16/30;C23C16/517;C30B25/10;C30B29/04;(IPC1-7):C23C16/26 主分类号 C01B31/04
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