| 摘要 |
In the method of the present invention, a stripping operation is carried out by the photoresist process and ion implantation is carried out in an active area several times by using a layer (2) of polycrystalline silicon as a self-alignment mask, in such a way that the multipotential profile, of the type in the shape of "trenches" of the channel is formed in the mid-part of the latter under the second gates (5) of polycrystalline silicon. The multipotential profile of the type in "trenches" shape prevents the charges from diffusing over the whole of the channel laterally when the quantity of charges is small. The charges are trapped in the region of the second gates (5), which translates into an increase in the self-induced field and in the dispersion field, thus increasing the effectiveness of the transfer of a small quantity of charges. Applications: among other things, camcorders. <IMAGE> |
